t4 - lds - 0262 , rev . 1 (1 20783 ) ?201 2 microsemi corporation page 1 of 7 jans_ 2n3057a radiation hardened low power npn silicon transistor q ua lified per mil - prf - 19500/391 qualified levels : jansm, jansd, jansp, jansl, and jansr description this rha level 2n3057a npn silicon transistor device is military qualified up to a j ansr level for high - reliability applications requiring a radiation hardened device. microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. to - 46 (to - 20 6ab) package also available in : to - 39 (to - 205ad) (leaded) jans_2 n3019, 2n3019s to - 18 (to - 206aa) (leaded) jans_2 n3700 ub package (surface mount) jans_2 n3700ub important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n30 57 . ? rha level jan qualification s per mil - prf -1 9500/ 391 (see part nomenclature for all options ). applications / benefits ? low profile metal to - 46 leaded package. ? light weight. ? g eneral C purpose switching and amplifier applications. ? military and h igh - reliability appli cations. maximum ratings @ t a = +25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temp erature t j and t stg - 65 to +200 o c thermal impedance junction - to - ambient r ? ja 325 o c /w thermal impedance junction - to - case r ? jc 80 o c /w collector - emitter voltage v ceo 80 v collector - base voltage v cbo 140 v emitter - base voltage v ebo 7.0 v collector current i c 1.0 a total power dissipation: @ t a = +25 o c (1) @ t c = +25 o c (2) p d 0. 5 1.8 w notes : 1. derate linearly 2.3 mw/c for t a +25 c . 2. derate linearly 10.3 mw/c for t c +25 c . downloaded from: http:///
t4 - lds - 0262 , rev . 1 (1 20783 ) ?201 2 microsemi corporation page 2 of 7 jans_ 2n3057a mechanical and packaging ? case: nickel plated k ovar, g lass seals. ? terminals: gold over nickel plat e d kovar leads. s older d ip (sn63/pb37) a vailable upon request. ? marking: part n umber, d ate c ode, m anufacturers id and serial number . ? weight: approximately 0.234 grams. ? see package dimensions on last page. part nomenclature jan sm 2n 30 57a reliability level jansm = 3k rads (si) jansd = 10 k rads (si) jans p = 3 0 k rads (si) jans l = 50 k rads (si) jans r = 100 k rads (si) jedec type number symbols & definitions symbol definition f frequency i b base current (dc) i e emitter cur rent (dc) t a ambient temperature t c case temperature v cb collector to base voltage (dc) v ce collector to emitter voltage (dc) v eb emitter to base voltage (dc) downloaded from: http:///
t4 - lds - 0262 , rev . 1 (1 20783 ) ?201 2 microsemi corporation page 3 of 7 jans_ 2n3057a electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off charactertics collector - emitter breakdown current i c = 30 ma v (br)ceo 80 v collector - base cutoff current v cb = 140 v i cbo 10 a emitter - base cutoff current v eb = 7 v i ebo1 10 a collector - emitter cutoff curr ent v ce = 90 v i ces 10 a emitter - base cutoff current v eb = 5.0 v i ebo2 10 a on charactertics forward - current transfer ratio i c = 150 ma, v ce = 10 v i c = 0.1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 1.0 a, v ce = 10 v h fe 100 50 90 50 15 300 300 300 collector - emitter saturation voltage i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma v ce(sat) 0.2 0.5 v base - emitter saturation voltage i c = 150 ma, i b = 15 ma v be(sat) 1.1 v dynamic characteristics para meters / test conditions symbol min. max. unit small - signal short - circuit forward current transfer ratio h fe i c = 1.0 ma, v ce = 5.0 v, f = 1.0 khz 80 400 magnitude of small - signal short - circuit forward current transfer ratio |h fe | i c = 50 ma, v ce = 10 v, f = 20 mhz 5.0 20 output capacitance c obo pf v cb = 10 v, i e = 0, 100 khz f 1.0 mhz 12 input capacitance c ibo pf v eb = 0.5 v, i c = 0, 100 khz f 1.0 mhz 60 downloaded from: http:///
t4 - lds - 0262 , rev . 1 (1 20783 ) ?201 2 microsemi corporation page 4 of 7 jans_ 2n3057a electrical characteristics @ t a = +25 c, unless otherwise noted (continued) safe operation area (see soa graph below and mil - std - 750, method 3053 ) dc tests t c = 25 c, 1 cycle, t = 10 ms test 1 2n3057a v ce = 10 v i c = 180 ma test 2 2n3057a v ce = 40 v i c = 45 ma test 3 2n3057a v ce = 80 v i c = 22.5 ma (1) pulse test: pulse width = 300 s, d uty c ycle 2.0% . v ce C collector C emitter voltage C v maximum safe operating area i c C collector current - a downloaded from: http:///
t4 - lds - 0262 , rev . 1 (1 20783 ) ?201 2 microsemi corporation page 5 of 7 jans_ 2n3057a electrical characteristics @ t a = +25 c, unless otherwise noted (continued) post radiation electrical characteristics parameters / test conditions symbol min. max. un it collector to base cutoff current i cbo 20 a v cb = 140 v emitter to base cutoff current i ebo 20 a v eb = 7 v collector to emitter breakdown voltage v (br)ceo 80 v i c = 30 ma collector - emitter cutoff current i ces 20 a v ce = 90 v emitter - base cutoff current i ebo 20 a v eb = 5.0 v forward - current transfer ratio (2) [h fe ] i c = 150 ma , v ce = 10 v i c = 0.1 ma, v ce = 10 v i c = 10 ma, v ce = 10 v i c = 500 ma, v ce = 10 v i c = 1 a, v ce = 10 v [50] [25] [45] [25] [7.5 ] 300 300 300 collector - emitter saturation voltage v ce(sat) v i c = 150 ma, i b = 15 ma i c = 500 ma, i b = 50 ma 0.23 0.58 base - emitter saturation voltage v be(sat) v i c = 150 ma, i b = 15 ma 1.27 (2) see method 1019 of mil - std - 750 for how to de termine [h fe ] by first calculating the delta (1/h fe ) from the pre - and post - radiation h fe . notice the [h fe ] is not the same as h fe and cannot be measured directly. the [h fe ] value can never exceed the pre - radiation minimum h fe that it is based upon. downloaded from: http:///
t4 - lds - 0262 , rev . 1 (1 20783 ) ?201 2 microsemi corporation page 6 of 7 jans_ 2n3057a grap hs t a ( o c) ambient figure 1 temperature - power derating (r ? ja ) leads = .125 inch (3.175mm) t c ( o c) case at base figure 2 temperature - power derating (r ? jc ) maximum dc operation rating (w) maximum dc operation rating (w) downloaded from: http:///
t4 - lds - 0262 , rev . 1 (1 20783 ) ?201 2 microsemi corporation page 7 of 7 jans_ 2n3057a package dimensions notes: 1. dimension are in inches. 2. millimeters are given for general information only. 3. beyond r (radius) maximum, tw shall be held for a minimum length of .011 inch (0.2 8 mm). 4. dimension tl measured from maximum hd. 5. leads at gauge plane .054 +.001 - .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at mmc. the device may be measured by direct methods. 6. dimension lu applies between l 1 and l 2 . dimension ld applies between l 2 and ll minimum. diameter is uncontrolled in l 1 and beyond ll minimum. 7. all three leads. 8. the collector shall be internally connected to the case. 9. dimension r (radius) applies to both inside corners of tab. 10. in accordance with asme y14.5m, diameters are equivalent to x symbology. 11. lead 1 = emitter, lead 2 = base, lead 3 = collector. dimensions symbol inches millimeters note min max min max cd .178 .195 4.52 4.95 ch .065 .085 1.65 2.16 hd .209 .230 5.31 5.84 lc .100 tp 2.54 tp 6 ld .016 .021 0.41 0.53 7 ll .500 1.750 12.70 44.45 7 lu .016 .019 0.41 0.48 7 l1 .050 1.27 7 l2 .250 6.35 7 tl .028 .048 0.71 1.22 3 tw .036 .046 0.91 1.17 2 r .007 0.18 10, 11 45 tp 45 tp 6 downloaded from: http:///
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